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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STH275N8F7-6AG
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2410499STH275N8F7-6AG ImageSTMicroelectronics

STH275N8F7-6AG

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Reference Price(In US Dollars)

In stock
1000+
$2.737
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Specifications
  • Part Number
    STH275N8F7-6AG
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 80V 180A H2PAK-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STH275N8F7-6AG.pdf
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    H2PAK-6
  • Series
    Automotive, AEC-Q101, STripFET™ F7
  • Rds On (Max) @ Id, Vgs
    2.1 mOhm @ 90A, 10V
  • Power Dissipation (Max)
    315W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-7, D²Pak (6 Leads + Tab)
  • Other Names
    497-15474-2
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    38 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    13600pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    193nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
  • Current - Continuous Drain (Id) @ 25°C
    180A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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