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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STL25N60M2-EP
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6755598STL25N60M2-EP ImageSTMicroelectronics

STL25N60M2-EP

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Reference Price(In US Dollars)

In stock
1+
$2.81
10+
$2.522
100+
$2.067
500+
$1.759
1000+
$1.484
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Specifications
  • Part Number
    STL25N60M2-EP
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 16A MLPD8X8 4L
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STL25N60M2-EP.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4.75V @ 250µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PowerFlat™ (8x8) HV
  • Series
    MDmesh™ M2-EP
  • Rds On (Max) @ Id, Vgs
    205 mOhm @ 8A, 10V
  • Power Dissipation (Max)
    125W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerVDFN
  • Other Names
    497-16249-1
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1090pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 16A (Tc) 125W (Tc) Surface Mount PowerFlat™ (8x8) HV
  • Current - Continuous Drain (Id) @ 25°C
    16A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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