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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STL4P2UH7
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24106STL4P2UH7 ImageSTMicroelectronics

STL4P2UH7

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Specifications
  • Part Number
    STL4P2UH7
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 4A PWRFLAT2X2
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STL4P2UH7.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1V @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PowerFlat™ (2x2)
  • Series
    DeepGATE™, STripFET™ VII
  • Rds On (Max) @ Id, Vgs
    100 mOhm @ 2A, 4.5V
  • Power Dissipation (Max)
    2.4W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-PowerWDFN
  • Other Names
    497-14996-2
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    510pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    4.8nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 4A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)
  • Current - Continuous Drain (Id) @ 25°C
    4A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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