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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STP10N60M2
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4959472STP10N60M2 ImageSTMicroelectronics

STP10N60M2

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Reference Price(In US Dollars)

In stock
1+
$1.95
50+
$1.562
100+
$1.367
500+
$1.06
1000+
$0.837
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Specifications
  • Part Number
    STP10N60M2
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STP10N60M2.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220
  • Series
    MDmesh™ II Plus
  • Rds On (Max) @ Id, Vgs
    600 mOhm @ 3A, 10V
  • Power Dissipation (Max)
    85W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    497-13970-5
    STP10N60M2-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    13.5nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole TO-220
  • Current - Continuous Drain (Id) @ 25°C
    7.5A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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