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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STP10NM60ND
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4896185STP10NM60ND ImageSTMicroelectronics

STP10NM60ND

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Reference Price(In US Dollars)

In stock
1+
$3.46
50+
$2.789
100+
$2.51
500+
$1.952
1000+
$1.617
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Specifications
  • Part Number
    STP10NM60ND
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 8A TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STP10NM60ND.pdf
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220
  • Series
    FDmesh™ II
  • Rds On (Max) @ Id, Vgs
    600 mOhm @ 4A, 10V
  • Power Dissipation (Max)
    70W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    497-12276
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    577pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 8A (Tc) 70W (Tc) Through Hole TO-220
  • Current - Continuous Drain (Id) @ 25°C
    8A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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