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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STP165N10F4
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6536177STP165N10F4 ImageSTMicroelectronics

STP165N10F4

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Reference Price(In US Dollars)

In stock
1+
$4.26
50+
$3.421
100+
$3.117
500+
$2.524
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Specifications
  • Part Number
    STP165N10F4
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 120A TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220AB
  • Series
    DeepGATE™, STripFET™
  • Rds On (Max) @ Id, Vgs
    5.5 mOhm @ 60A, 10V
  • Power Dissipation (Max)
    315W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    497-10710-5
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    38 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    10500pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    180nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 120A (Tc) 315W (Tc) Through Hole TO-220AB
  • Current - Continuous Drain (Id) @ 25°C
    120A (Tc)
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