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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STP80N10F7
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5843539STP80N10F7 ImageSTMicroelectronics

STP80N10F7

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Reference Price(In US Dollars)

In stock
1+
$2.89
50+
$2.329
100+
$2.096
500+
$1.63
1000+
$1.351
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Specifications
  • Part Number
    STP80N10F7
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 80A TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STP80N10F7.pdf
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220
  • Series
    DeepGATE™, STripFET™ VII
  • Rds On (Max) @ Id, Vgs
    10 mOhm @ 40A, 10V
  • Power Dissipation (Max)
    110W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    497-14834-5
    STP80N10F7-ND
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    38 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3100pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    45nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 80A (Tc) 110W (Tc) Through Hole TO-220
  • Current - Continuous Drain (Id) @ 25°C
    80A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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