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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STQ1HN60K3-AP
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1017945STQ1HN60K3-AP ImageSTMicroelectronics

STQ1HN60K3-AP

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Reference Price(In US Dollars)

In stock
2000+
$0.33
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Specifications
  • Part Number
    STQ1HN60K3-AP
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 0.4A TO-92
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STQ1HN60K3-AP.pdf
  • Vgs(th) (Max) @ Id
    4.5V @ 50µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-92-3
  • Series
    SuperMESH3™
  • Rds On (Max) @ Id, Vgs
    8 Ohm @ 600mA, 10V
  • Power Dissipation (Max)
    3W (Tc)
  • Packaging
    Tape & Box (TB)
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Other Names
    497-13784-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    38 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    140pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    9.5nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
  • Current - Continuous Drain (Id) @ 25°C
    400mA (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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