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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STW50N65DM2AG
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4888225STW50N65DM2AG ImageSTMicroelectronics

STW50N65DM2AG

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Reference Price(In US Dollars)

In stock
1+
$8.19
30+
$6.719
120+
$6.063
510+
$5.08
1020+
$4.425
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Specifications
  • Part Number
    STW50N65DM2AG
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 28A
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STW50N65DM2AG.pdf
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-247
  • Series
    Automotive, AEC-Q101, MDmesh™ DM2
  • Rds On (Max) @ Id, Vgs
    87 mOhm @ 19A, 10V
  • Power Dissipation (Max)
    300W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    497-16138-5
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3200pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 28A (Tc) 300W (Tc) Through Hole TO-247
  • Current - Continuous Drain (Id) @ 25°C
    28A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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