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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STW56N65M2-4
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5538704STW56N65M2-4 ImageSTMicroelectronics

STW56N65M2-4

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Reference Price(In US Dollars)

In stock
1+
$9.39
30+
$7.697
120+
$6.946
510+
$5.82
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Specifications
  • Part Number
    STW56N65M2-4
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V I2PAKFP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-247-4L
  • Series
    MDmesh™ M2
  • Rds On (Max) @ Id, Vgs
    62 mOhm @ 24.5A, 10V
  • Power Dissipation (Max)
    358W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-4
  • Other Names
    497-15373-5
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3900pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    93nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247-4L
  • Current - Continuous Drain (Id) @ 25°C
    49A (Tc)
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