TSM2N60SCW RPG

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Reference Price(In US Dollars)

In stock

$0.79

10+

$0.688

100+

$0.531

500+

$0.393

1000+

$0.314

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Specifications

Part Number

TSM2N60SCW RPG
Manufacturer/Brand

Taiwan Semiconductor
Stock Quantity

In stock
Description

MOSFET N-CH 600V 600MA SOT223
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

TSM2N60SCW RPG.pdf
ECAD Model
Vgs(th) (Max) @ Id

4V @ 250µA
Vgs (Max)

±30V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

SOT-223
Series

-
Rds On (Max) @ Id, Vgs

5 Ohm @ 600mA, 10V
Power Dissipation (Max)

2.5W (Tc)
Packaging

Cut Tape (CT)
Package / Case

TO-261-4, TO-261AA
Other Names

TSM2N60SCW RPGCT
TSM2N60SCW RPGCT-ND
TSM2N60SCWRPGCT
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

3 (168 Hours)
Manufacturer Standard Lead Time

22 Weeks
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

435pF @ 25V
Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

10V
Drain to Source Voltage (Vdss)

600V
Detailed Description

N-Channel 600V 600mA (Tc) 2.5W (Tc) Surface Mount SOT-223
Current - Continuous Drain (Id) @ 25°C

600mA (Tc)

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TSM2N60SCW RPG

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Reference Price(In US Dollars)

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