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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > BCR 116L3 E6327
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4570673BCR 116L3 E6327 ImageInternational Rectifier (Infineon Technologies)

BCR 116L3 E6327

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Specifications
  • Part Number
    BCR 116L3 E6327
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 250MW TSLP-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BCR 116L3 E6327.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    PG-TSLP-3-4
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Power - Max
    250mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-101, SOT-883
  • Other Names
    BCR 116L3 E6327-ND
    BCR116L3E6327
    BCR116L3E6327XT
    SP000014853
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    150MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSLP-3-4
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    BCR116

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