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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > BCR35PNE6327BTSA1
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358441BCR35PNE6327BTSA1 ImageInternational Rectifier (Infineon Technologies)

BCR35PNE6327BTSA1

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Specifications
  • Part Number
    BCR35PNE6327BTSA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP PREBIAS SOT363
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BCR35PNE6327BTSA1.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    PG-SOT363-6
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    250mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-VSSOP, SC-88, SOT-363
  • Other Names
    BCR 35PN E6327
    BCR 35PN E6327-ND
    BCR35PNE6327BTSA1TR
    BCR35PNE6327XT
    SP000010831
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    150MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    BCR35PN

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