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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC014NE2LSIATMA1
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4155660BSC014NE2LSIATMA1 ImageInternational Rectifier (Infineon Technologies)

BSC014NE2LSIATMA1

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Reference Price(In US Dollars)

In stock
5000+
$0.631
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Specifications
  • Part Number
    BSC014NE2LSIATMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 25V 33A TDSON-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TDSON-8
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    1.4 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    2.5W (Ta), 74W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerTDFN
  • Other Names
    BSC014NE2LSI
    BSC014NE2LSI-ND
    BSC014NE2LSIATMA1TR
    BSC014NE2LSITR-ND
    SP000911336
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2700pF @ 12V
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    25V
  • Detailed Description
    N-Channel 25V 33A (Ta), 100A (Tc) 2.5W (Ta), 74W (Tc) Surface Mount PG-TDSON-8
  • Current - Continuous Drain (Id) @ 25°C
    33A (Ta), 100A (Tc)
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Description: DIFFERENTIATED MOSFETS

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In stock

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