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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > BSM50GD120DN2E3226BOSA1
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BSM50GD120DN2E3226BOSA1

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Reference Price(In US Dollars)

In stock
10+
$134.40
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Specifications
  • Part Number
    BSM50GD120DN2E3226BOSA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    IGBT 2 LOW POWER ECONO2-2
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    3V @ 15V, 50A
  • Supplier Device Package
    Module
  • Series
    -
  • Power - Max
    350W
  • Package / Case
    Module
  • Other Names
    BSM50GD120DN2E3226
    SP000100366
  • Operating Temperature
    150°C (TJ)
  • NTC Thermistor
    No
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Input Capacitance (Cies) @ Vce
    3.3nF @ 25V
  • Input
    Standard
  • IGBT Type
    -
  • Detailed Description
    IGBT Module Three Phase Inverter 1200V 50A 350W Chassis Mount Module
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    50A
  • Configuration
    Three Phase Inverter

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