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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSP149 E6327
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1274355BSP149 E6327 ImageInternational Rectifier (Infineon Technologies)

BSP149 E6327

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Specifications
  • Part Number
    BSP149 E6327
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 660MA SOT-223
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    1V @ 400µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-SOT223-4
  • Series
    SIPMOS®
  • Rds On (Max) @ Id, Vgs
    1.8 Ohm @ 660mA, 10V
  • Power Dissipation (Max)
    1.8W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    BSP149 E6327-ND
    BSP149E6327
    BSP149E6327T
    SP000011104
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    430pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    Depletion Mode
  • Drive Voltage (Max Rds On, Min Rds On)
    0V, 10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
  • Current - Continuous Drain (Id) @ 25°C
    660mA (Ta)
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