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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSP171PE6327T
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4704926BSP171PE6327T ImageInternational Rectifier (Infineon Technologies)

BSP171PE6327T

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Specifications
  • Part Number
    BSP171PE6327T
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 60V 1.9A SOT223
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    2V @ 460µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-SOT223-4
  • Series
    SIPMOS®
  • Rds On (Max) @ Id, Vgs
    300 mOhm @ 1.9A, 10V
  • Power Dissipation (Max)
    1.8W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    BSP171PE6327XTINTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    460pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
  • Current - Continuous Drain (Id) @ 25°C
    1.9A (Ta)
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