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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSP299H6327XUSA1
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1496923BSP299H6327XUSA1 ImageInternational Rectifier (Infineon Technologies)

BSP299H6327XUSA1

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Reference Price(In US Dollars)

In stock
1000+
$0.744
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Specifications
  • Part Number
    BSP299H6327XUSA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 500V 0.4A SOT-223
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BSP299H6327XUSA1.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-SOT223-4
  • Series
    SIPMOS®
  • Rds On (Max) @ Id, Vgs
    4 Ohm @ 400mA, 10V
  • Power Dissipation (Max)
    1.8W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    BSP299H6327XUSA1-ND
    BSP299H6327XUSA1TR
    SP001058628
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 25V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    500V
  • Detailed Description
    N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
  • Current - Continuous Drain (Id) @ 25°C
    400mA (Ta)

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