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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSZ180P03NS3EGATMA1
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4767030BSZ180P03NS3EGATMA1 ImageInternational Rectifier (Infineon Technologies)

BSZ180P03NS3EGATMA1

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Reference Price(In US Dollars)

In stock
5000+
$0.268
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Specifications
  • Part Number
    BSZ180P03NS3EGATMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 30V 39.6A TSDSON-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3.1V @ 48µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TSDSON-8
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    18 mOhm @ 20A, 10V
  • Power Dissipation (Max)
    2.1W (Ta), 40W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerTDFN
  • Other Names
    BSZ180P03NS3E G
    BSZ180P03NS3E G-ND
    BSZ180P03NS3EGATMA1TR
    SP000709740
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2220pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    P-Channel 30V 9A (Ta), 39.5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount PG-TSDSON-8
  • Current - Continuous Drain (Id) @ 25°C
    9A (Ta), 39.5A (Tc)
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