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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > FD-DF80R12W1H3_B52
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4695034

FD-DF80R12W1H3_B52

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Reference Price(In US Dollars)

In stock
24+
$37.793
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Specifications
  • Part Number
    FD-DF80R12W1H3_B52
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    IGBT MODULE VCES 1200V 40A
  • Lead Free Status / RoHS Status
  • Datasheets
    FD-DF80R12W1H3_B52.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 40A
  • Supplier Device Package
    Module
  • Series
    -
  • Power - Max
    215W
  • Package / Case
    Module
  • Other Names
    SP001092012
  • Operating Temperature
    -40°C ~ 125°C
  • NTC Thermistor
    Yes
  • Mounting Type
    Chassis Mount
  • Manufacturer Standard Lead Time
    24 Weeks
  • Input Capacitance (Cies) @ Vce
    235nF @ 25V
  • Input
    Standard
  • IGBT Type
    Trench Field Stop
  • Detailed Description
    IGBT Module Trench Field Stop Single 1200V 40A 215W Chassis Mount Module
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    40A
  • Configuration
    Single

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