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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > FF650R17IE4DPB2BOSA1
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FF650R17IE4DPB2BOSA1

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Reference Price(In US Dollars)

In stock
3+
$611.95
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Specifications
  • Part Number
    FF650R17IE4DPB2BOSA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    IGBT MODULE VCES 1700V 650A
  • Lead Free Status / RoHS Status
  • Datasheets
    FF650R17IE4DPB2BOSA1.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Vce(on) (Max) @ Vge, Ic
    2.45V @ 15V, 650A
  • Supplier Device Package
    Module
  • Series
    -
  • Package / Case
    Module
  • Other Names
    FF650R17IE4DP_B2
    FF650R17IE4DP_B2-ND
    SP001089910
  • Operating Temperature
    -40°C ~ 150°C
  • NTC Thermistor
    Yes
  • Mounting Type
    Chassis Mount
  • Manufacturer Standard Lead Time
    26 Weeks
  • Input Capacitance (Cies) @ Vce
    54nF @ 25V
  • Input
    Standard
  • IGBT Type
    Trench Field Stop
  • Detailed Description
    IGBT Module Trench Field Stop 2 Independent 1700V 650A Chassis Mount Module
  • Current - Collector Cutoff (Max)
    5mA
  • Current - Collector (Ic) (Max)
    650A
  • Configuration
    2 Independent

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