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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > IFS75B12N3E4B31BOSA1
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IFS75B12N3E4B31BOSA1

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Reference Price(In US Dollars)

In stock
10+
$126.352
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Specifications
  • Part Number
    IFS75B12N3E4B31BOSA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOD IGBT LOW PWR ECONO
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Datasheets
    IFS75B12N3E4B31BOSA1.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.15V @ 15V, 75A
  • Supplier Device Package
    Module
  • Series
    -
  • Power - Max
    385W
  • Package / Case
    Module
  • Other Names
    IFS75B12N3E4_B31
    SP000643726
  • Operating Temperature
    -40°C ~ 150°C
  • NTC Thermistor
    Yes
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Input Capacitance (Cies) @ Vce
    4.3nF @ 25V
  • Input
    Standard
  • IGBT Type
    Trench Field Stop
  • Detailed Description
    IGBT Module Trench Field Stop Full Bridge 1200V 150A 385W Chassis Mount Module
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    150A
  • Configuration
    Full Bridge

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