International Rectifier (Infineon Technologies)

IPB065N03LGATMA1

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Reference Price(In US Dollars)

In stock

$1.54

10+

$1.36

100+

$1.075

500+

$0.834

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Specifications

Part Number

IPB065N03LGATMA1
Manufacturer/Brand

Cypress Semiconductor (Infineon Technologies)
Stock Quantity

In stock
Description

MOSFET N-CH 30V 50A TO-263-3
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

IPB065N03LGATMA1.pdf
ECAD Model
Vgs(th) (Max) @ Id

2.2V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

D²PAK (TO-263AB)
Series

OptiMOS™
Rds On (Max) @ Id, Vgs

6.5 mOhm @ 30A, 10V
Power Dissipation (Max)

56W (Tc)
Packaging

Original-Reel®
Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names

IPB065N03LGATMA1DKR
IPB065N03LGINDKR
IPB065N03LGINDKR-ND
Operating Temperature

-55°C ~ 175°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
Drain to Source Voltage (Vdss)

30V
Detailed Description

N-Channel 30V 50A (Tc) 56W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C

50A (Tc)

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