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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB081N06L3GATMA1
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2436413IPB081N06L3GATMA1 ImageInternational Rectifier (Infineon Technologies)

IPB081N06L3GATMA1

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Reference Price(In US Dollars)

In stock
1000+
$0.777
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Specifications
  • Part Number
    IPB081N06L3GATMA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 50A TO263-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPB081N06L3GATMA1.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.2V @ 34µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    8.1 mOhm @ 50A, 10V
  • Power Dissipation (Max)
    79W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    IPB081N06L3 G
    IPB081N06L3 G-ND
    IPB081N06L3 GTR-ND
    IPB081N06L3G
    IPB081N06L3GATMA1TR
    SP000398076
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4900pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 50A (Tc) 79W (Tc) Surface Mount D²PAK (TO-263AB)
  • Current - Continuous Drain (Id) @ 25°C
    50A (Tc)

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