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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB12CN10N G
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4031510IPB12CN10N G ImageInternational Rectifier (Infineon Technologies)

IPB12CN10N G

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Specifications
  • Part Number
    IPB12CN10N G
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 67A TO263-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPB12CN10N G.pdf
  • Vgs(th) (Max) @ Id
    4V @ 83µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    12.6 mOhm @ 67A, 10V
  • Power Dissipation (Max)
    125W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    IPB12CN10N G-ND
    IPB12CN10NG
    SP000096450
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4320pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    65nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 67A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB)
  • Current - Continuous Drain (Id) @ 25°C
    67A (Tc)

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