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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB60R099C6ATMA1
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3348908IPB60R099C6ATMA1 ImageInternational Rectifier (Infineon Technologies)

IPB60R099C6ATMA1

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Reference Price(In US Dollars)

In stock
1000+
$3.659
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Specifications
  • Part Number
    IPB60R099C6ATMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 37.9A TO263
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    3.5V @ 1.21mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Series
    CoolMOS™
  • Rds On (Max) @ Id, Vgs
    99 mOhm @ 18.1A, 10V
  • Power Dissipation (Max)
    278W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    IPB60R099C6
    IPB60R099C6-ND
    IPB60R099C6ATMA1TR
    IPB60R099C6TR-ND
    SP000687468
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2660pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    119nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 37.9A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263AB)
  • Current - Continuous Drain (Id) @ 25°C
    37.9A (Tc)
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