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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB80N06S2L11ATMA1
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7025338IPB80N06S2L11ATMA1 ImageInternational Rectifier (Infineon Technologies)

IPB80N06S2L11ATMA1

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Specifications
  • Part Number
    IPB80N06S2L11ATMA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 55V 80A TO263-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPB80N06S2L11ATMA1.pdf
  • Vgs(th) (Max) @ Id
    2V @ 93µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO263-3-2
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    10.7 mOhm @ 60A, 10V
  • Power Dissipation (Max)
    158W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    IPB80N06S2L-11
    IPB80N06S2L-11-ND
    IPB80N06S2L11ATMA1TR
    SP000218177
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2075pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Detailed Description
    N-Channel 55V 80A (Tc) 158W (Tc) Surface Mount PG-TO263-3-2
  • Current - Continuous Drain (Id) @ 25°C
    80A (Tc)

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