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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPC100N04S51R2ATMA1
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1353753IPC100N04S51R2ATMA1 ImageInfineon Technologies

IPC100N04S51R2ATMA1

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Reference Price(In US Dollars)

In stock
5000+
$0.845
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Specifications
  • Part Number
    IPC100N04S51R2ATMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 40V 100A 8TDFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Voltage - Test
    7650pF @ 25V
  • Voltage - Breakdown
    PG-TDSON-8-34
  • Vgs(th) (Max) @ Id
    1.2 mOhm @ 50A, 10V
  • Vgs (Max)
    7V, 10V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    OptiMOS™, Automotive, AEC-Q101
  • RoHS Status
    Tape & Reel (TR)
  • Rds On (Max) @ Id, Vgs
    100A
  • Polarization
    8-PowerTDFN
  • Other Names
    IPC100N04S51R2ATMA1TR
    SP001262620
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Manufacturer Part Number
    IPC100N04S51R2ATMA1
  • Input Capacitance (Ciss) (Max) @ Vds
    131nC @ 10V
  • IGBT Type
    ±20V
  • Gate Charge (Qg) (Max) @ Vgs
    3.5V @ 90µA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 40V 100A 150W (Tc) Surface Mount PG-TDSON-8-34
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET N-CH 40V 100A 8TDFN
  • Current - Continuous Drain (Id) @ 25°C
    40V
  • Capacitance Ratio
    150W (Tc)
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