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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD13N03LA G
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6651093IPD13N03LA G ImageInternational Rectifier (Infineon Technologies)

IPD13N03LA G

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Specifications
  • Part Number
    IPD13N03LA G
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 25V 30A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    2V @ 20µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO252-3
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    12.8 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    46W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    IPD13N03LA
    IPD13N03LAGINTR
    IPD13N03LAGXT
    IPD13N03LAGXTINTR
    IPD13N03LAGXTINTR-ND
    IPD13N03LAINTR
    IPD13N03LAINTR-ND
    SP000017537
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1043pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    8.3nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    25V
  • Detailed Description
    N-Channel 25V 30A (Tc) 46W (Tc) Surface Mount PG-TO252-3
  • Current - Continuous Drain (Id) @ 25°C
    30A (Tc)
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