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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD50N06S4L12ATMA1
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310772IPD50N06S4L12ATMA1 ImageInternational Rectifier (Infineon Technologies)

IPD50N06S4L12ATMA1

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Reference Price(In US Dollars)

In stock
1+
$0.78
10+
$0.689
100+
$0.527
500+
$0.417
1000+
$0.334
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Specifications
  • Part Number
    IPD50N06S4L12ATMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 50A TO252-3-11
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.2V @ 20µA
  • Vgs (Max)
    ±16V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    12 mOhm @ 50A, 10V
  • Power Dissipation (Max)
    50W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    IPD50N06S4L12ATMA1DKR
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2890pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    40nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 50A (Tc) 50W (Tc) Surface Mount
  • Current - Continuous Drain (Id) @ 25°C
    50A (Tc)
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