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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD60R1K0CEATMA1
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1601830IPD60R1K0CEATMA1 ImageInternational Rectifier (Infineon Technologies)

IPD60R1K0CEATMA1

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Specifications
  • Part Number
    IPD60R1K0CEATMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V TO-252-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    3.5V @ 130µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-252-3
  • Series
    CoolMOS™ CE
  • Rds On (Max) @ Id, Vgs
    1 Ohm @ 1.5A, 10V
  • Power Dissipation (Max)
    37W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    IPD60R1K0CEATMA1TR
    SP001276032
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    280pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 4.3A (Tc) 37W (Tc) Surface Mount TO-252-3
  • Current - Continuous Drain (Id) @ 25°C
    4.3A (Tc)
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Description: MOSFET N-CH 600V 3.2A TO252-3

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Description: MOSFET N-CH 250V 25A TO252-3

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Description: MOSFET N-CH 600V 18A TO252-3

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Description: CONSUMER

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Description: MOSFET N-CH 600V 12A TO252-3

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Description: MOSFET N-CH 250V 25A

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Description: MOSFET N-CH 600V TO252

Manufacturers: International Rectifier (Infineon Technologies)
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Description: MOSFET N-CH 650V 18A TO252-3

Manufacturers: International Rectifier (Infineon Technologies)
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Description: MOSFET N-CH 600V 12A TO252-3

Manufacturers: International Rectifier (Infineon Technologies)
In stock
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Description: MOSFET N-CH TO252-3

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In stock

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