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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD60R380E6ATMA2
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3764902IPD60R380E6ATMA2 ImageInternational Rectifier (Infineon Technologies)

IPD60R380E6ATMA2

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Specifications
  • Part Number
    IPD60R380E6ATMA2
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET NCH 600V 10.6A TO252
  • Lead Free Status / RoHS Status
    Not applicable / Not applicable
  • Datasheets
  • Vgs(th) (Max) @ Id
    3.5V @ 300µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO252-3
  • Series
    CoolMOS™
  • Rds On (Max) @ Id, Vgs
    380 mOhm @ 3.8A, 10V
  • Power Dissipation (Max)
    83W (Tc)
  • Packaging
    Bulk
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Lead Free Status / RoHS Status
    Not applicable / Not applicable
  • Input Capacitance (Ciss) (Max) @ Vds
    700pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    32nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    Super Junction
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
  • Current - Continuous Drain (Id) @ 25°C
    10.6A (Tc)
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Description: MOSFET N-CH 600V TO-252-3

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