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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD65R600E6BTMA1
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5908519IPD65R600E6BTMA1 ImageInternational Rectifier (Infineon Technologies)

IPD65R600E6BTMA1

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Specifications
  • Part Number
    IPD65R600E6BTMA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 7.3A TO252-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPD65R600E6BTMA1.pdf
  • Vgs(th) (Max) @ Id
    3.5V @ 210µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO252-3
  • Series
    CoolMOS™
  • Rds On (Max) @ Id, Vgs
    600 mOhm @ 2.1A, 10V
  • Power Dissipation (Max)
    63W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    IPD65R600E6
    IPD65R600E6-ND
    IPD65R600E6BTMA1TR
    IPD65R600E6TR-ND
    SP000800216
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    440pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
  • Current - Continuous Drain (Id) @ 25°C
    7.3A (Tc)

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