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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI037N06L3GHKSA1
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3454040IPI037N06L3GHKSA1 ImageInternational Rectifier (Infineon Technologies)

IPI037N06L3GHKSA1

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Specifications
  • Part Number
    IPI037N06L3GHKSA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 90A TO262-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPI037N06L3GHKSA1.pdf
  • Vgs(th) (Max) @ Id
    2.2V @ 93µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO262-3
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    3.7 mOhm @ 90A, 10V
  • Power Dissipation (Max)
    167W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Other Names
    IPI037N06L3 G
    IPI037N06L3 G-ND
    SP000397910
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    13000pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    79nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 90A (Tc) 167W (Tc) Through Hole PG-TO262-3
  • Current - Continuous Drain (Id) @ 25°C
    90A (Tc)

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