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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI057N08N3 G
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397274IPI057N08N3 G ImageInternational Rectifier (Infineon Technologies)

IPI057N08N3 G

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Specifications
  • Part Number
    IPI057N08N3 G
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 80V 80A TO262-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPI057N08N3 G.pdf
  • Vgs(th) (Max) @ Id
    3.5V @ 90µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO262-3
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    5.7 mOhm @ 80A, 10V
  • Power Dissipation (Max)
    150W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Other Names
    IPI057N08N3 G-ND
    IPI057N08N3G
    SP000395182
    SP000680662
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4750pF @ 40V
  • Gate Charge (Qg) (Max) @ Vgs
    69nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3
  • Current - Continuous Drain (Id) @ 25°C
    80A (Tc)

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