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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI147N12N3GAKSA1
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5162465IPI147N12N3GAKSA1 ImageInternational Rectifier (Infineon Technologies)

IPI147N12N3GAKSA1

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Reference Price(In US Dollars)

In stock
500+
$1.075
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Specifications
  • Part Number
    IPI147N12N3GAKSA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 120V 56A TO262-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPI147N12N3GAKSA1.pdf
  • Vgs(th) (Max) @ Id
    4V @ 61µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO262-3
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    14.7 mOhm @ 56A, 10V
  • Power Dissipation (Max)
    107W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Other Names
    IPI147N12N3 G
    IPI147N12N3 G-ND
    IPI147N12N3G
    SP000652744
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3220pF @ 60V
  • Gate Charge (Qg) (Max) @ Vgs
    49nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    120V
  • Detailed Description
    N-Channel 120V 56A (Ta) 107W (Tc) Through Hole PG-TO262-3
  • Current - Continuous Drain (Id) @ 25°C
    56A (Ta)

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