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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPL65R1K5C6SATMA1
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IPL65R1K5C6SATMA1

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Reference Price(In US Dollars)

In stock
5000+
$0.514
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Specifications
  • Part Number
    IPL65R1K5C6SATMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 8TSON
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    3.5V @ 100µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    Thin-PAK (5x6)
  • Series
    CoolMOS™ C6
  • Rds On (Max) @ Id, Vgs
    1.5 Ohm @ 1A, 10V
  • Power Dissipation (Max)
    26.6W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerTDFN
  • Other Names
    SP001163086
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    225pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 3A (Tc) 26.6W (Tc) Surface Mount Thin-PAK (5x6)
  • Current - Continuous Drain (Id) @ 25°C
    3A (Tc)
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