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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPP080N06N G
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4916230IPP080N06N G ImageInternational Rectifier (Infineon Technologies)

IPP080N06N G

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Specifications
  • Part Number
    IPP080N06N G
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 80A TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPP080N06N G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 150µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO220-3-1
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    8 mOhm @ 80A, 10V
  • Power Dissipation (Max)
    214W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    IPP080N06N G-ND
    IPP080N06NG
    IPP080N06NGX
    IPP080N06NGXK
    SP000204173
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3500pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    93nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 80A (Tc) 214W (Tc) Through Hole PG-TO220-3-1
  • Current - Continuous Drain (Id) @ 25°C
    80A (Tc)

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