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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPP60R190E6XKSA1
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2527765IPP60R190E6XKSA1 ImageInternational Rectifier (Infineon Technologies)

IPP60R190E6XKSA1

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Reference Price(In US Dollars)

In stock
1+
$3.37
10+
$3.006
100+
$2.465
500+
$1.996
1000+
$1.683
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Specifications
  • Part Number
    IPP60R190E6XKSA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 20.2A TO220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPP60R190E6XKSA1.pdf
  • Vgs(th) (Max) @ Id
    3.5V @ 630µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO-220-3
  • Series
    CoolMOS™
  • Rds On (Max) @ Id, Vgs
    190 mOhm @ 9.5A, 10V
  • Power Dissipation (Max)
    151W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    IPP60R190E6
    IPP60R190E6-ND
    SP000797378
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1400pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO-220-3
  • Current - Continuous Drain (Id) @ 25°C
    20.2A (Tc)

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