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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPS110N12N3GBKMA1
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140529IPS110N12N3GBKMA1 ImageInternational Rectifier (Infineon Technologies)

IPS110N12N3GBKMA1

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Specifications
  • Part Number
    IPS110N12N3GBKMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 120V 75A TO251-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 83µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO251-3
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    11 mOhm @ 75A, 10V
  • Power Dissipation (Max)
    136W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Stub Leads, IPak
  • Other Names
    IPS110N12N3 G
    IPS110N12N3 G-ND
    IPS110N12N3GBKMA1TR-ND
    SP000674456
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4310pF @ 60V
  • Gate Charge (Qg) (Max) @ Vgs
    65nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    120V
  • Detailed Description
    N-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO251-3
  • Current - Continuous Drain (Id) @ 25°C
    75A (Tc)
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