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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPS65R1K0CEAKMA2
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IPS65R1K0CEAKMA2

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Reference Price(In US Dollars)

In stock
1500+
$0.359
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Specifications
  • Part Number
    IPS65R1K0CEAKMA2
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    CONSUMER
  • Lead Free Status / RoHS Status
    RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    3.5V @ 200µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO251-3
  • Series
    CoolMOS™ CE
  • RoHS Status
    RoHS Compliant
  • Rds On (Max) @ Id, Vgs
    1 Ohm @ 1.5A, 10V
  • Power Dissipation (Max)
    68W (Tc)
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    SP001724356
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Input Capacitance (Ciss) (Max) @ Vds
    328pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    15.3nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 7.2A (Tc) 68W (Tc) Through Hole PG-TO251-3
  • Current - Continuous Drain (Id) @ 25°C
    7.2A (Tc)
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