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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPT111N20NFDATMA1
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5205663IPT111N20NFDATMA1 ImageInternational Rectifier (Infineon Technologies)

IPT111N20NFDATMA1

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Reference Price(In US Dollars)

In stock
2000+
$4.363
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Specifications
  • Part Number
    IPT111N20NFDATMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 96A HSOF-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 267µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-HSOF-8
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    11.1 mOhm @ 96A, 10V
  • Power Dissipation (Max)
    375W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerSFN
  • Other Names
    IPT111N20NFDATMA1-ND
    IPT111N20NFDATMA1TR
    SP001340384
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    7000pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    87nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 96A (Tc) 375W (Tc) Surface Mount PG-HSOF-8
  • Current - Continuous Drain (Id) @ 25°C
    96A (Tc)
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