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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF1018ESPBF
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3773847IRF1018ESPBF ImageInternational Rectifier (Infineon Technologies)

IRF1018ESPBF

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Reference Price(In US Dollars)

In stock
1000+
$0.804
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Specifications
  • Part Number
    IRF1018ESPBF
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 79A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 100µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D2PAK
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    8.4 mOhm @ 47A, 10V
  • Power Dissipation (Max)
    110W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    SP001561450
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2290pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    69nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK
  • Current - Continuous Drain (Id) @ 25°C
    79A (Tc)
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