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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF5210STRR
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5493654IRF5210STRR ImageInternational Rectifier (Infineon Technologies)

IRF5210STRR

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Specifications
  • Part Number
    IRF5210STRR
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 100V 40A D2PAK
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D2PAK
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    60 mOhm @ 24A, 10V
  • Power Dissipation (Max)
    3.8W (Ta), 200W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2700pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    180nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    P-Channel 100V 40A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
  • Current - Continuous Drain (Id) @ 25°C
    40A (Tc)
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Manufacturers: Electro-Films (EFI) / Vishay
In stock

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