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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF6691TR1PBF
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3466138IRF6691TR1PBF ImageInternational Rectifier (Infineon Technologies)

IRF6691TR1PBF

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Specifications
  • Part Number
    IRF6691TR1PBF
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 32A DIRECTFET
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IRF6691TR1PBF.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    DIRECTFET™ MT
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    1.8 mOhm @ 15A, 10V
  • Power Dissipation (Max)
    2.8W (Ta), 89W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    DirectFET™ Isometric MT
  • Other Names
    IRF6691TR1PBFCT
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    6580pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    71nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    N-Channel 20V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
  • Current - Continuous Drain (Id) @ 25°C
    32A (Ta), 180A (Tc)

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