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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF6711STR1PBF
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5073039IRF6711STR1PBF ImageInternational Rectifier (Infineon Technologies)

IRF6711STR1PBF

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Specifications
  • Part Number
    IRF6711STR1PBF
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 25V 19A DIRECTFET-SQ
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IRF6711STR1PBF.pdf
  • Vgs(th) (Max) @ Id
    2.35V @ 25µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    DIRECTFET™ SQ
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    3.8 mOhm @ 19A, 10V
  • Power Dissipation (Max)
    2.2W (Ta), 42W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    DirectFET™ Isometric SQ
  • Other Names
    IRF6711STR1PBFCT
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1810pF @ 13V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    25V
  • Detailed Description
    N-Channel 25V 19A (Ta), 84A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
  • Current - Continuous Drain (Id) @ 25°C
    19A (Ta), 84A (Tc)

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