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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF7701GTRPBF
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IRF7701GTRPBF

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Specifications
  • Part Number
    IRF7701GTRPBF
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 12V 10A 8-TSSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IRF7701GTRPBF.pdf
  • Vgs(th) (Max) @ Id
    1.2V @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-TSSOP
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    11 mOhm @ 10A, 4.5V
  • Power Dissipation (Max)
    1.5W (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-TSSOP (0.173", 4.40mm Width)
  • Other Names
    IRF7701GTRPBFCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    5050pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    100nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    P-Channel 12V 10A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP
  • Current - Continuous Drain (Id) @ 25°C
    10A (Ta)

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