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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFH5010TR2PBF
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3756440IRFH5010TR2PBF ImageInternational Rectifier (Infineon Technologies)

IRFH5010TR2PBF

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Specifications
  • Part Number
    IRFH5010TR2PBF
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 13A 5X6 PQFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IRFH5010TR2PBF.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 150µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-PQFN (5x6)
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    9 mOhm @ 50A, 10V
  • Power Dissipation (Max)
    3.6W (Ta), 250W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerVDFN
  • Other Names
    IRFH5010TR2PBFCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4340pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    98nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6)
  • Current - Continuous Drain (Id) @ 25°C
    13A (Ta), 100A (Tc)

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