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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFSL59N10D
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4857964IRFSL59N10D ImageInternational Rectifier (Infineon Technologies)

IRFSL59N10D

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Specifications
  • Part Number
    IRFSL59N10D
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 59A TO-262
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    IRFSL59N10D.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    5.5V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-262
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    25 mOhm @ 35.4A, 10V
  • Power Dissipation (Max)
    3.8W (Ta), 200W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Other Names
    *IRFSL59N10D
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2450pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    114nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 59A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262
  • Current - Continuous Drain (Id) @ 25°C
    59A (Tc)

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