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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IRG8P25N120KD-EPBF
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5275721IRG8P25N120KD-EPBF ImageInternational Rectifier (Infineon Technologies)

IRG8P25N120KD-EPBF

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Specifications
  • Part Number
    IRG8P25N120KD-EPBF
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 40A 180W TO-247AD
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IRG8P25N120KD-EPBF.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 15A
  • Test Condition
    600V, 15A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    20ns/170ns
  • Switching Energy
    800µJ (on), 900µJ (off)
  • Supplier Device Package
    TO-247AD
  • Series
    -
  • Reverse Recovery Time (trr)
    70ns
  • Power - Max
    180W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    SP001544900
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    -
  • Gate Charge
    135nC
  • Detailed Description
    IGBT 1200V 40A 180W Through Hole TO-247AD
  • Current - Collector Pulsed (Icm)
    45A
  • Current - Collector (Ic) (Max)
    40A

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